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Patents

GRANTED PATENTS
PENDING PATENTS
 

  1. United States Patent US7,450,352, 2008, “Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers”, Y. A. Chang, and J. Joshua Yang.

  2. United States Patent US7,579,042, 2009, “Methods for the fabrication of thermally stable magnetic tunnel junctions”, Y. A. Chang, J. Joshua Yang and P. F. Ladwig.

  3. United States Patent US7,985,962, 2011, “Memristive device”, A. M. Bratkovski, D. Ohlberg, J. Joshua Yang.

  4. United States Patent, US8,093,575, 2011, “Memristive device with a bi-metallic electrode”, Q. Xia, X. Li, J. Joshua Yang.

  5. United States Patent, US8,063,395, 2011, “Memristor amorphous metal alloy electrodes”, Q. Xia, J. Joshua Yang, S. Y. Wang.

  6. United States Patent US8,207,593, 2012, “Memristor having a nanostructure in the switching material” A. M. Bratkovski, J. Joshua Yang, Q. Xia.

  7. United States Patent US8,203,171, 2012, “Defective graphene-based memristor” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

  8. United States Patent US8,207,520, 2012, “Programmable crosspoint device with an integral diode” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  9. United States Patent US8,283,649, 2012, “Memristor with a non-planar substrate” A. M Bratkovski, S.-Y. Wang, J. Joshua Yang, M. Stuke.

  10. United States Patent US8,264,868, 2012, “Memory array with metal-insulator transition switching devices” G. M. Ribeiro, Pickett, Matthew, J. Joshua Yang.

  11. United States Patent US8,259,485, 2012, “Multilayer structures having memory elements with varied resistance of switching layers” J. Joshua Yang, J. P. Strachan, W. Wu.

  12. United States Patent US8,294,132, 2012, “Graphene memristor having modulated graphene interlayer conduction” F. Miao, J. Joshua Yang, W. Wu, S.-Y. Wang, R. S. Williams.

  13. United States Patent US8,226,3521, 2012, “Memristors with an electrode metal reservoir for dopants” J. Joshua Yang, W. Yi, M. Stuke, S.-Y. Wang.

  14. United States Patent US8,225,8304, 2012, “Guided mode resonator based raman enhancement apparatus” W. Wu, Q. Xia, J. Li, J. Joshua Yang.

  15. United States Patent US8,226,4724, 2012, “Changing a memristor state” F. Miao, J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  16. United States Patent USPTO US8,324,976 B2, 2012, “Oscillator circuitry having negative differential resistance” J. Borghetti, M. D. Pickett, G. Medelros-Ribeiro, W. Yi, J. Joshua Yang, M. Zhang.

  17. United States Patent US8,385,101, 2013, “Memory resistor having plural different active materials” J. Joshua Yang, M. Zhang, R. S. Williams.

  18. United States Patent USPTO US8,415,652, 2013, “Memristors with a switching layer comprising a composite of multiple phases” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  19. United States Patent USPTO US8,437,172, 2013, “Decoders using memristive switches” M.Fiorentino, W. M. Tong, P. J. Kuekes, J. Joshua Yang.

  20. United States Patent USPTO US8,437,072, 2013, “Individually addressable nano mechanical actuator and contact switch by redox reaction in a crossbar array” J. Joshua Yang, R. S. Williams, W. M. Tong.

  21. United States Patent USPTO US8,450,711, 2013, “Semiconductor memristor devices” R. S. Williams, J. Joshua Yang, D. R. Stewart.

  22. United States Patent USPTO US8,455,852, 2013, “Controlled placement of dopants in memristor active regions” N. J. Quitoriano, P. J. Kuekes, J. Joshua Yang.

  23. United States Patent USPTO US8,487,289, 2013, “Electrically actuated device” J. Joshua Yang, M. Zhang, G. Medelros-Ribeiro.

  24. United States Patent USPTO US 8,525,146, 2013, “Electrical circuit component” W. Wu, M. D. Pickett, J. Joshua Yang, Q. Xia, G. Medeiros Ribeiro.

  25. United States Patent USPTO US8,525,553, 2013, “Negative differential resistance comparator circuits” M. D. Pickett, J. Joshua Yang, M. Zhang.

  26. United States Patent USPTO US8,519,372, 2013, “Electroforming-free nanoscale switching device” J. Joshua Yang, S.-Y. Wang, R. S. Williams, A. Bratkovski, G. Medeiros Ribeiro.

  27. United States Patent USPTO US8,530,873, 2013, “Electroforming free memristor and method for fabricating thereof” J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

  28. United States Patent USPTO US8,546,785, 2013, “Memristive device” J. Joshua Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

  29. United States Patent USPTO US8,575,585, 2013, “Memristive device” J. Joshua Yang, Q. Xia, A. A. Bratkovski.

  30. United States Patent USPTO US8,570,138, 2013, “Resistive Switches” J. Joshua Yang, D. B. Strukov, S. Y. Wang.

  31. United States Patent USPTO US8,586,959, 2013, “Memristive switch device” M. D. Pickett, J. Joshua Yang, D. B. Strukov.

  32. United States Patent USPTO US8,587,985, 2013, “Memory array with graded resistance lines” J. Joshua Yang, J. P. Strachan, W. Wu, Janice H. Nickel.

  33. United States Patent USPTO US8,710,483 B2, 2014, “Memristive junction with intrinsic rectifier” J. Joshua Yang, J. P. Strachan, M. D. Pickett.

  34. United States Patent USPTO US8,710,865, 2014, “Field-programmable analog array with memristors” J. Joshua Yang, M. S. Qureshi, G. Medeiros-Ribeiro, R. S. Williams.

  35. United States Patent USPTO US8,711,594, 2014, “Asymmetric switching rectifier” M.-X. Zhang, J. Joshua Yang, R. S. Williams.

  36. United States Patent USPTO US8,737,113, 2014, “Memory resistor having multi-layer electrodes” J. Joshua Yang, W. Wu, R Gilberto-Ribeiro.

  37. United States Patent USPTO US9,018,083 B2, 2014, “Electrically actuated device and method of controlling the formation of dopants therein” J. Joshua Yang, D. Stewart, P. J. Kuekes, W. M. Tong.

  38. United States Patent USPTO US8,767,438, 2014, “Memelectronic Device” J. Joshua Yang, B. J. Choi, M. -X. Max Zhang, G. Medeiros-Ribeiro, R. S. Williams.

  39. United States Patent USPTO US8,766,231, 2014, “Nanoscale Electronic Device with Barrier Layers” Wei Yi, J. Joshua Yang, G. Medeiros-Ribeiro.

  40. United States Patent USPTO US8,779,409, 2014, “Low energy memristors with engineered switching channel materials” J. Joshua Yang, M.-X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

  41. United States Patent USPTO US8,779,848, 2014, “Two terminal memcapacitor device” M. D. Pickett, J. Borghetti, J. Joshua Yang.

  42. United States Patent USPTO US8,891,284, 2014, “Memristors based on mixed-metal-valence compounds” R. S. Williams, J. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro, J. P. Strachan.

  43. United States Patent USPTO US8,809,158, 2014, “Device having memristive memory” M. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

  44. United States Patent USPTO US8,829,581, 2014, “Resistive memory devices” S. Y. Wang, J. Joshua Yang, A. A. Bratkovski, R. S. Williams.

  45. United States Patent USPTO US8,923,034, 2014, “Multi-level memory cell with continuously tunable switching” Y. Wei, F. Miao, J. Joshua Yang.

  46. United States Patent USPTO US8,872,153, 2014, “Device structure for long endurance memristors” J. Joshua Yang, M.-X. Zhang, R.S. Williams.

  47. United States Patent USPTO US8,882,217, 2014, “Printhead assembly including memory elements” P. V. Lea, G. M. Ribeiro, M. D. Pickett, J. Joshua Yang.

  48. United States Patent USPTO US8,879,300, 2014, “Switchable two-terminal devices with diffusion/drift species” J. Joshua Yang, W. Wu, Q. Xia.

  49. United States Patent USPTO US8,878,342, 2014, “Using alloy electrodes to dope memristors” N. J. Quitoriano, D. Ohlberg, P. J. Kuekes, J. Joshua Yang.

  50. United States Patent USPTO US8,890,106, 2014, “Hybrid circuit of nitride-based transistor and memristor” J. Joshua Yang, G. Medeiros-Ribeiro, B. J. Choi, R. S. Williams.

  51. United States Patent USPTO US8,912,520, 2014, “Nanoscale switching device” J. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro.

  52. United States Patent USPTO US8,921,960, 2015, “Memristor cell structures for high density arrays” J. Joshua Yang, M. X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

  53. United States Patent USPTO US9,082,533, 2015, “Memristive element based on hetero-junction oxide” J. Joshua Yang, M. X. Zhang, R. S. Williams.

  54. United States Patent USPTO US9,159,476 B2, 2015, “Negative differential resistance device” J. Joshua Yang, M. X. Zhang, R. S. Williams.

  55. United States Patent USPTO US9,000,411 B2, 2015, “Memristor devices configured to control bubble formation” Z. Li, A. M. Bratkovski, J. Joshua Yang.

  56. United States Patent USPTO US8,766,228, 2014, “Electrically actuated device and method of controlling the formation of dopants therein” J. Joshua Yang, D. R. Stewart, P. J. Kuekes, W. M. Tong.

  57. United States Patent USPTO US9,024,285, 2015, “Nanoscale switching devices with partially oxidized electrodes” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

  58. United States Patent USPTO US9,466,793, B2, 2015, “Memristors having at least one junction” H. S. Cho, J. Joshua Yang, J. H. Nickel.

  59. United States Patent USPTO US9,041,157, B2, “Method for doping an electrically actuated device” W. Wu, S. V. Mathai, S-Y. Wang, J. Joshua Yang.

  60. United States Patent USPTO US9,040,285 B2, 2015, “Nanoscale switching device” G. Medeiros-Ribeiro, J. H. Nickel, J. Joshua Yang.

  61. United States Patent USPTO US9,082,972 B2, 2015, “Bipolar resistive switch heat mitigation” J. P. Strachan, G. Medeiros Ribeiro, J. Joshua Yang, W. Yi.

  62. United States Patent USPTO US9,196,354, 2015, “Memory resistor adjustment using feedback control” J. P. Strachan, J. Borghetti, M. D. Pickett, G. Ribeiro, J. Joshua Yang.

  63. United States Patent USPTO US9,184,213, 2015, “Nanoscale switching device” J. Joshua Yang, D. B. Strukov, W. Wu.

  64. United States Patent USPTO US9,184,382, 2015, “Memristive devices with layered junctions and methods for fabricating the same” M. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

  65. United States Patent USPTO US9,178,153, 2015, “Memristor structure with a dopant source” M. X. Zhang, J. Joshua Yang, R. S. Williams.

  66. United States Patent USPTO US9,171,613, 2015, “Memristors with asymmetric electrodes” A. M. Bratkovski, J. Joshua Yang, S.-Y. Wang, M. Stuke.

  67. United States Patent USPTO US9,165,645, 2015, “High-reliability high-speed memristor” F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros-Ribeiro, R S. Williams.

  68. United States Patent USPTO US8,982,601 B2, 2015, “Switchable junction with an intrinsic diode formed with a voltage dependent resistor” J. Joshua Yang, J. P. Strachan, J. Borghetti, M. D. Pickett.

  69. United States Patent USPTO US9,224,949 B2, 2015, “Memristive elements that exhibit minimal sneak path current” J. Joshua Yang, M. X. Zhang, R. S. Williams.

  70. United States Patent USPTO US9,257,645 B2, 2016, “Memristors having mixed oxide phases” J. Joshua Yang, M. X. Zhang, F. Miao.

  71. United States Patent USPTO US9,293,200 B2, 2016, “Multilayer memory array” J. H. Nickel, G. Medeiros-Ribeiro, J. Joshua Yang.

  72. United States Patent USPTO US9,331,278 B2, 2016, “Forming memristors on imaging devices” J. Joshua Yang, N. Ge, Z. Li, M. X. Zhang.

  73. United States Patent USPTO US9,276,204 B2, 2016, “Memristor with channel region in thermal equilibrium with containing region” F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. Stanley Williams.

  74. United States Patent USPTO US9,224,821 B2, 2015, “Customizable nonlinear electrical devices” M. X. Zhang, J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

  75. United States Patent USPTO US9,478,738 B2, 2016, “High-reliability high-speed memristor” F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. S. Williams.

  76. United States Patent USPTO US9,508,928 B2, 2016, “Nanochannel array of nanowires for resistive memory devices” S.-Y. Wang, J. Joshua Yang.

  77. United States Patent USPTO US9,558,869, 2017, “Negative differential resistance device” J. Joshua Yang, M. Zhang, R. S. Williams.

  78. United States Patent USPTO US9,847,124 B2, 2017, “Resistive elements to operate as a matrix of probabilities”, M. Hu, J. P. Strachan, G. Ning, J. Joshua Yang.

  79. United States Patent USPTO US9,847,378 B2, 2017, “Resistive memory devices with a multi-component electrode” X. Sheng, Y. Jeon, J. Joshua Yang, H. S. Cho, R. H. Henze.

  80. United States Patent USPTO US9,776,400 B2, 2017, “ Printhead with a number of memristor cells and a parallel current distributor” N. Ge, J. Joshua Yang, Z. Li.

  81. United States Patent USPTO US9,701,115 B2, 2017, “Printheads having memories formed thereon” J. Joshua Yang, N. Ge, Z. Li.

  82. United States Patent USPTO US9, 793,322 B2, 2017, “Apparatus having first and second switching materials” N. Ge, J. Joshua Yang, R. S. Williams, K. M. Kim.

  83. United States Patent USPTO US9,793,473, B2, 2017 “Memristor structures” S. Y. Wang, J. Joshua Yang, M. M. Zhang, A. M. Bratkovski.

  84. United States Patent USPTO US9,885,937 B2, 2018, “Dynamical optical crossbar array” J. Joshua Yang, A. M. Bratkovski, D. A. Fattal, M. Zhang.

  85. United States Patent USPTO US9,870,822 B2, 2018, “Non-volatile memory element with thermal-assisted switching control” G. Ning, J. Joshua Yang, Z. Li.

  86. United States Patent USPTO US9,947,405 B2, 2018 “Memristive dot product engine with a nulling amplifier” J. P. Strachan, G. E. Montgomery, N. Ge, M. Hu, J. Joshua Yang.

  87. United States Patent USPTO US9,911,789 B2, 2018 “1-Selector n-Resistor memristive devices” J. Joshua Yang, G. Gibson, Z. Li.

  88. United States Patent USPTO US9,911,490 B2, 2018 “Memory controllers” N. Ge, J. Joshua Yang, F. Perner, J. H. Nickel.

  89. United States Patent USPTO US9, 889,659 B2, 2018 “Printhead with a memristor” N. Ge, J. Joshua Yang, M. Zhang.

  90. United States Patent USPTO US9,934,852 B2, 2018 “Sensing an output signal in a crossbar array based on a time delay between arrival of a target output and a sneak output” K. M. Kim, N. Ge, J. Joshua Yang.

  91. United States Patent USPTO US9, 911,915 B2, 2018 “Multiphase selectors” J. Joshua Yang, Y. Jeon, H. S. Cho.

  92. United States Patent USPTO US9,934,849 B2, 2018 “Asymmetrically selecting memory elements” K. M. Kim, J. Joshua Yang, Z. Li.

  93. United States Patent USPTO US9, 911,788 B2, 2018 “Selectors with oxide-based layers” J. Joshua Yang, Ning Ge, Zhiyong Li.

  94. EP 2,842,163 B1, 2018 “Nonlinear memristors” J. Joshua Yang, M. Zhang, M. D. Pickett, R. S. Williams.

  95. United States Patent USPTO US10, 026,896 B2, 2018 “Mutilayered Memristors” W. Jackson, J. Joshua Yang, K. M. Kim, Z. Li.

  96. United States Patent USPTO US10, 026, 477 B2, 2018 “Selector relaxation time reduction” J. Joshua Yang, N. Ge, J. P. Strachan, G. Gibson, W. Jackson.

  97. United States Patent USPTO US10, 026, 894 B2, 2018 “Memristors with oxide switching layer” N. Ge, J. Joshua Yang, M. Zhang, K. Samuels.

  98. United States Patent USPTO US10, 008, 264 B2, 2018 “Memristor corss-bar array for determining a dot product” N. Ge, J. Joshua Yang, J. P. Strachan, M. Hu.

  99. United States Patent USPTO US10, 056, 142 B2, 2018 “Generating a representative logic indicator of grouped memristors” N. Ge, J. Joshua Yang, Z. Li, R. S. Williams.

  100. United States Patent USPTO US10, 076, 904 B2, 2018 “Integrated circuit devices comprising memristors” J. Joshua Yang, N. Ge, Z. Li.

  101. United States Patent USPTO US10, 096, 651 B2, 2018 “Resistive memory devices and arrays” J. Joshua Yang, N. Ge, k. Samuels, M. Zhang.

  102. United States Patent USPTO US10, 074, 695 B2, 2018 “Negative differential resistance (NDR) device based on fast diffusive metal atoms” J. Joshua Yang, R. S. Williams, M. Zhang, Z. Li.

  103. United States Patent USPTO US10, 186, 660 B2, 2018 “Memristor device” Q. Xia, H. Jiang, J. Joshua Yang.

  104. WO EP US KR TW TWI622989B, 2019, “Temperature compensation circuits” N. Ge, J. Joshua Yang, M. Hu, J. P. Strachan.

  105. WO US TW TWI611403B, 2018, “A resistive random-access memory in printed circuit board” N. Ge, V. Nguyen, J. Joshua Yang, C. Hua, L. Warnes, D. B Fujii

  106. WO US US20180075904A1, 2018, “Memristive crossbar array having multi-selector memristor cells” N. Ge, J. Joshua Yang, Z. Li, R. S. Williams

  107. WO US US20180017870A1, “Dynamic logic Memcap” N. Ge, Z. Li, J. Joshua Yang, R. S. Williams

  108. US10,181, 349 B2, “Nonvolatile memory cross-bar array” N. Ge, J. Joshua Yang, J. P. Strachan, M. Hu

  109. US10, 109, 348, B2, “Double bias memristive dot product engine for vector processing” M. Hu, J. Joshua Yang, J. P. Strachan, N. Ge

  110. US10, 147, 762 B2, “Protective elements for non-volatile memory cells in crossbar arrays” M. Zhang, J. Joshua Yang, R. S. Williams

  111. US10, 249, 356 B2, “Memcapacitive cross-bar array for determining a dot product” N. Ge, J. P. Strachan, J. Joshua Yang, H. Miao.

  112. EP2997597B1, 2018, “Nanochannel array of nanowires for resistive memory devices” S.-Y. Wang, J. Joshua Yang.

  113. US10, 319, 441 B2, “Nonvolatile memory cross-bar array” N. Ge, J. Joshua Yang, J. P. Strachan, H. Miao.

  114. US10, 325, 655 B2, “Temperature compensation circuits” N. Ge, J. Joshua Yang, H. Miao, J. P. Strachan.

  115. US10, 262, 733 B2, “Memristive dot product engine for vector processing” J. Joshua Yang, H. Miao, J. P. Strachan.N. Ge.

  116. US10,580,473 B2, “Memcapacitive cross-bar array for determining a dot product” J. Joshua Yang, N. Ge., J. P. Strachan, J. Joshua Yang, H. Miao.

  117. US10, 741, 759 B2, “Diffusive memristor and device for synaptic emulator” J. Joshua Yang, Q. Xia, M. Mclean, Q. Wu, M. Barnell.

  118. US10, 740, 672 B2, “Capacitive artificial neural networks” J. Joshua Yang, Q. Xia, Z. Wang, Q. Wu, M. R. Mclean.

  119. United States Patent USPTO US11, 126, 403 B2, 2021, “True random number generator (TRNG) circuit using a diffusive memristor” J. Joshua Yang, Q. Xia, H. Jiang.

  120. United States Patent USPTO US10, 970, 625 B2, 2021, “Device with multiple resistance switches with different switching characteristics” M. Hu, J. Joshua Yang, N. Ge.

 

  1. US-2011121359-A1, "Multi-Layer Reconfigurable Switches ", J. Joshua Yang, Julien Borghetti, Duncan Stewart, R. Stanley Williams.

  2. WO-2011005266-A1, "Memristive junction with intrinsic rectifier ", J. Joshua Yang, John Paul Strachan, Matthew D. Pickett.

  3. US-2012012809-A1, "Switchable Junction with Intrinsic Diodes with Different Switching Threshold ", J. Joshua Yang, Shih-Yuan(SY) Wang, R. Stanley Williams.

  4. US-2012164745-A1, "Nanofinger device with magnetizable portion ", Kai-Mei Camilla Fu, J. Joshua Yang, Fung Suong Ou.

  5. WO-2012057772-A1, "Memristive devices and memristors with ribbon-like junctions and methods for fabricating the same ", Hans S. Cho, J. Joshua Yang.

  6. US-2013026434-A1, "Memristor with controlled electrode grain size ", J. Joshua Yang, John Pual Strachan, Matthew D. Pickett, R. Stanley Williams.

  7. WO-2011008195-A2, "Memristive device ", J. Joshua Yang, Qiangfei Xia, Alexandre M . Bratkovski.

  8. WO-2012177265-A1, "High-reliability high-speed memristor ", Feng Miao, J. Joshua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams.

  9. US-2012001017-A1, "Installation platform for deploying an earth-based sensor network utilizing a projected pattern from a height ", John Paul Strachan, Wei Yi, J. Joshua Yang.

  10. US-2012074378-A1, "Memory element having elastically deformable active region ", Wei Wu, J. Joshua Yang, Zhiyong Li, Shih-Yuan Wang, Dmitri Strukov, Alexandre Bratkovski.

  11. WO-2011028208-A1, "Memristors based on mixed-metal-valence compounds ", R. Stanley Williams, J. Joshua Yang, Matthew Pickett, Gilberto Ribeiro, John Paul Strachan.

  12. WO-2011096940-A1, "Memory resistor having multi-layer electrodes ", J. Joshua Yang, Wei Wu, Gilberto Ribeiro.

  13. US-2012018698-A1, "Low-power nanoscale switching device with an amorphous switching material ", J. Joshua Yang, R. Stanley Williams, Gilberto Ribeiro.

  14. US-2016254448-A1, "Nonlinear memristor devices with three-layer selectors ", Byungjoon Choi, J. Joshua Yang, R. Stanley Williams, Gary Gibson, Warren Jackson.

  15. US-2012313070-A1, "Controlled switching memristor ", R. Stanley Williams, Gilberto Medeiros Ribeiro, Dmitri Borisovich Strukov, J. Joshua Yang.

  16. US-2014158973-A1, "Nitride-based memristors ", J. Joshua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams.

  17. US-2013234103-A1, "Nanoscale switching device with an amorphous switching material ", J. Joshua Yang, R. Stanley Williams, Gilberto Medeiros Ribeiro.

  18. US-2017125674-A1, "Mulatiphase selectors ", J. Joshua Yang, Yoocharn Jeon, Hans S. Cho.

  19. US-2016315256-A1, "V-shape resistive memory element ", Ning Ge, J. Joshua Yang, Chaw Sing Ho.

  20. US-2016028005-A1, "Memristor structure with a dopant source ", Minxian Max Zhang, J. Joshua Yang, R. Stanley Williams.

  21. US-2017271406-A1, "Superlinear selectors ", J. Joshua Yang, Gary Gibson, Zhiyong Li.

  22. US-2016351802-A1, "Nonlinear dielectric stack circuit element ", Warren Jackson, Gary Gibson, R. Stanley Williams, J. Joshua Yang.

  23. US-2017323677-A1, "Memcapacitive cross-bar array for determining a dot product ", Ning Ge, John Paul Strachan, J. Joshua Yang, Miao Hu.

  24. US-2016043312-A1, "Memristors with dopant-compensated switching ", J. Joshua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams.

  25. US-2017243109-A1, "Device with multiple resistance switches with different switching characteristics ", Miao Hu, J. Joshua Yang, Ning Ge.

  26. US-2017271408-A1, "Memory cell with a multi-layered selector ", J. Joshua Yang, Ning Ge, Zhiyong Li, Richard H. Henze.

  27. US-2017271589-A1, "Resistive memory arrays with a negative temperature coefficient of resistance material ", Minxian Max Zhang, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  28. US-2017279042-A1, "Fast erasing memristors ", Ning Ge, J. Joshua Yang, Minxian Zhang.

  29. US-2011260134-A1, "Thermally Stable Nanoscale Switching Device ", J. Joshua Yang, Stanley Williams, Julien Borghetti, John Paul Strachan.

  30. US-2016225823-A1, "Switching resistance memory devices with interfacial channels ", Shih-Yuan Wang, J. Joshua Yang, R. Stanley Williams.

  31. US-2013271442-A1, "Flat-panel display including memristive devices ", Wendi Li, Wei Yi, Wei Wu, J. Joshua Yang.

  32. US-2017271591-A1, "Multilayered memristors ", Warren Jackson, J. Joshua Yang, Kyung Min Kim, Zhiyong Li.

  33. US-2017316827-A1, "Memristive cross-bar array for determining a dot product ", Ning Ge, J. Joshua Yang, John Paul Strachan, Miao Hu.

  34. WO-2010110803-A1, "Switchable junction with intrinsic diode ", J. Joshua Yang, Dmitri Borisovich Strukov, R. Stanley Williams.

  35. WO-2016014082-A1, "Printhead with a number of memristor cells and a number of firing cells coupled to a shared fire line ", Ning GE, J. Joshua Yang, Zhiyong Li.

  36. WO-2016163978-A1, "Electrically conducting oxygen diffusion barriers for memristors and selectors ", Katy SAMUELS, Minxian Max Zhang, J. Joshua Yang.

  37. WO-2016153516-A1, "Resistance memory devices including cation metal doped volatile selectors and cation metal electrodes ", Ning GE, J. Joshua Yang, Zhiyong Li.

  38. WO-2016014083-A1, "Printhead with a number of vertical oxide memristors having a sacrificial dielectric layer ", Ning GE, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  39. WO-2015167477-A1, "Printhead for depositing fluid onto a surface ", Ning GE, J. Joshua Yang, Zhiyong Li.

  40. WO-2016122524-A1, "Transparent memristive device ", Steven Barcelo, Ning GE, J. Joshua Yang, Max ZHANG.

  41. WO-2012105955-A1, "Negative differential resistance device ", J. Joshua Yang, Minxian ZHANG, R. Stanley Williams.

  42. WO-2016182562-A1, "Non-volatile resistance memory devices including a volatile selector ", Minxian Max Zhang, J. Joshua Yang, R. Stanley Williams, Katy SAMUELS, Zhiyong Li.

  43. WO-2016014087-A1, "Printhead with a number of top electrode-enclosed memristors ", Ning GE, J. Joshua Yang, Lu Zhang, Sity Lam, Max ZHANG.

  44. WO-2016122525-A1, "Hamming distance computation ", Ning GE, J. Joshua Yang, Zhiyong Li, Stanley Williams.

  45. WO-2016018198-A1, "Printhead with a number of memristors having metal-doped metalorganic switching oxides ", J. Joshua Yang, Ning GE, Lu Zhang.

  46. WO-2016153461-A1, "Memristive device with doped sol-gel switching layer ", Ning GE, J. Joshua Yang, Steven Barcelo, Zhiyong Li, Hou T. Ng.

  47. WO-2016153513-A1, "Code comparators ", Ning GE, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  48. WO-2016014085-A1, "Printhead with a number of memristors disposed on enclosed gate transistors ", Ning GE, J. Joshua Yang, Zhiyong Li.

  49. WO-2016068872-A1, "Printhead with memristors having different structures ", Ning GE, J. Joshua Yang, Zhiyong Li, R. Stanley Williams.

  50. WO-2015167495-A1, "Printhead with an off-chip memristor assembly ", Ning GE, J. Joshua Yang, Zhiyong Li, Max ZHANG.

  51. WO-2011123115-A1, "Nanoscale switching device ", Janice H. Nichel, Gilberto Medeiros Ribeiro, J. Joshua Yang.

  52. WO-2016153515-A1, "Resistance memory devices including cation metal doped volatile selectors ", J. Joshua Yang, Ning GE, Zhiyong Li, Katy SAMUELS.

  53. WO-2016068833-A1, "Head with a number of silicon nitride non-volatile memory devices ", Zhiyong Li, Ning GE, J. Joshua Yang, Max ZHANG.

  54. WO-2016068841-A1, "Printhead with a number of high resistance ratio memristors ", Ning GE, J. Joshua Yang, Zhiyong Li, Max ZHANG.

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